M58BW016BB Datasheet, Memories, ST Microelectronics

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M58BW016BB Features and benefits

SUMMARY s SUPPLY VOLTAGE
  – VDD = 2.7V to 3.6V for Program, Erase and Read
  – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
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M58BW016BB Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . Table 1. Signal Names . . . . . . . . . . . . . . .

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